Qualcomm Snapdragon 835

Qualcomm Snapdragon 835

Qualcomm Snapdragon 835 will ‘come into focus’ at CES 2017

Qualcomm looks like it will reveal more info on its upcoming Snapdragon 835 processor next week at the 2017 Consumer Electronics Show in Las Vegas. A newly posted teaser claims that the 835 will “come into focus” at the event.

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The company previously revealed that the Snapdragon 835 would be made with Samsung’s 10-nanometer FinFET process. It will also support the company’s Quick Charge 4 technology, which is designed to charge the battery of a smartphone with five hours of life with just five minutes of charging time.

So far, Qualcomm has not revealed much in the way of hardware specifics for the Snapdragon 835, such as clock speed and graphics performance. A recent benchmarking result on the GFXBench site for an alleged 835 development board claims the chip has an octa-core design with a clock speed of 2.2GHz and that its Adreno 540 GPU is 30 percent faster than the current Adreno 530 chip. However, online benchmarking results can be faked, and a development board’s results might also differ from the final product.

Unconfirmed rumors claim the first phone with the 835 will be none other than the Samsung Galaxy S8, which may be revealed sometime in April.

Qualcomm Snapdragon 835 could get a big graphics boost over 821

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Qualcomm announced the Snapdragon 835 mobile processor a few weeks ago, but so far the company hasn’t offered any official info on its clock speed or graphics performance. However, new online benchmarking results may have provided some early information on those details.

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The GFXBench site has recorded what appears to be the development board for the Snapdragon 835. Its numbers show that it has an octa-core design with a clock speed of 2.2GHz. However, the numbers for the processor’s Adreno 540 GPU may be more impressive. The benchmark indicates 30 percent better performance compared to the Adreno 530 that’s part of the current Snapdragon 821 processor.

Keep in mind that these numbers come from an online benchmarking site and, as a result, they may not be completely trustworthy. Also, the stats come from an early development board for the Snapdragon 835, so the final production board could see some performance improvements and final clock speeds could always change.

The Snapdragon 835 processor is expected to start showing up inside select smartphones sometime in early 2017. Unconfirmed rumors claim the first phone with the 835 will be none other than the Samsung Galaxy S8, which could be revealed in late February as part of the Mobile Word Congress 2017 trade show.

Snapdragon 835 tipped for the Galaxy S8, but what about Exynos?

As part of yesterday’s leaked details about the upcoming Qualcomm Snapdragon 835 (MSM8998) chip set, eagle eyed readers may have spotted reference to the Samsung Galaxy S8 at the bottom of the chart. According to the spec sheet, the Samsung Galaxy S8 will be the first smartphone powered by the octa-core Snapdragon 835 and the phone will make its debut around MWC 2017, which many were already expecting.

This year’s Samsung Galaxy S7 sports Qualcomm’s Snapdragon 820 flagship SoC, but also came with an Exynos 8890 variant in some regions. Samsung has been quiet about its next generation mobile SoC, but a number of reports and rumors suggest that an Exynos 8895 or 9 series chip is under development, and could again likely end up powering some Galaxy S8 models.

Samsung's next-gen Exynos chip may offer additional ISP and modem features to better compete with Qualcomm's Snapdragon

For a recap, the Snapdragon 835 leak suggests that we’re looking at an octa-core Kryo 200 CPU setup, a new Adreno 540 GPU, LPDDR4X RAM and UFS 2.1 memory, along with a X16 modem, all packaged using Samsung’s 10nm FinFET manufacturing technology. If the move back to an octa-core configuration turns out to be true, the 835 may end up looking a little more similar to Samsung’s Exynos chip again, which is likely to be sticking with a big.LITTLE CPU configuration.

Although details about both the chips remain unconfirmed, previous rumors about the Exynos 8895 processor point to a higher clocked version of the 8890, potentially reaching 3GHz for the big cores and 2.7GHz for the little cores. Although it’s not clear if Samsung plans to stick with its M1 CPU core, revise it, or return to an ARM Cortex solution next generation. However, it’s almost certain that Samsung will build such a chip on its own 10nm FinFET process. The chip is also expected to feature ARM’s latest Mali-G71 GPU, which can offer up to 80% more performance than the Mali-T880 found in this year’s Exynos 8890, and supports 4K content and displays. The Mali-G71 has already made its debut inside HiSilicon’s Kirin 960.

Samsung’s next generation processor, which will probably appear as a 9XXX series chip rather than the 8895, is also tipped to offer up a 70 percent boost to its image processing capabilities, which may be useful for a dual camera configuration. More recently there has also been talk about integrating a Shannon modem often used by the company into the SoCs itself, something which Qualcomm already does with its in-house X series modems.

Snapdragon 835 tipped for the Galaxy S8, but what about Exynos?

ARM’s Mali-G71 GPU, rumored for the next-gen Exynos, would be key for driving high resolution displays needed for VR.

Samsung is apparently interested in the Shannon 359 modem, which incorporates LD-LTE, LTE FDD, TD-SDCMA, WCDMA, CDMA, and GSM capabilities into a single chip. This would essentially allow Samsung to cover all of the world’s networks with a single solution, rather than having to rely on Qualcomm for CDMA coverage in countries like the USA. However, the Shannon 359 isn’t expected to arrive until Q3 2017, so this technology won’t be available in time for the Galaxy S8 and Samsung’s next Exynos SoC.

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With Samsung’s semiconductor division playing an increasingly important role in terms of company profitability, Samsung will be unlikely to turn down the opportunity to power at least some of its Galaxy S8 handsets with an in-house Exynos processor. Providing that it competes with the Snapdragon 835 on features and performance.

Alleged Snapdragon 835 and Snapdragon 660 specs leak

An image obtained by Chinese tech site anzhuo.cn might have revealed the specs for Qualcomm’s next-generation mobile processor, the Snapdragon 835. Qualcomm announced the Snapdragon 835 – previously thought to be called the Snapdragon 830 – last week, but didn’t delve into details concerning its hardware. Now the finer details may be out in the open.

The image, which also references a Snapdragon 660, was reposted by Gizmochina and suggests that the Snapdragon 835 will be based on a revised Kryo 200 CPU architecture, featuring an octa-core design with four large and four small cores (clock speeds unknown), an Adreno 540 GPU and the company’s X16 LTE modem. For comparison, this year’s flagship 14nm Snapdragon 820 features a quad-core Kryo CPU, Adreno 530 GPU, and X12 LTE modem.

Alleged Snapdragon 835 and Snapdragon 660 specs leak

The Snapdragon 835 will provide peak LTE download speeds of up to 1 Gbps, and four-channel LPDDR4X-1866 RAM, in addition to UFS2.1 flash memory.

Meanwhile, the Snapdragon 660 processor appears to be built up Samsung’s 14nm FinFet LPP manufacturing process, with four 2.2 GHz cores and four 1.9 GHz cores. The chip would also employ an Adreno 512 GPU, X10 baseband, and two channel LPDDR4X-1866 memory and UFS 2.1 flash memory. The Snapdragon 660 looks set to be the successor to the mid-range octa-core Snapdragon 652.

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Qualcomm announces Snapdragon 835, built on Samsung’s 10nm process

5 days ago

During its unveiling last week, Qualcomm confirmed that the Snapdragon 835 would feature Samsung’s 10-nanometer FinFET process – an industry first – and said that its Quick-Charge 4.0 technology could provide five hours of battery life in a five-minute charge. Smartphones carrying the new chipset are expected to launch in the first half of 2017.

Thanks for the tip XaErO!

Qualcomm’s Quick Charge 4 will offer 5 hours of battery life in just 5 minutes

Along with today’s official announcement of the Qualcomm Snapdragon 835 processor, the company is also introducing Quick Charge 4. The new version of its fast-charging battery technology will be used first with smartphones that have the Snapdragon 835 chip inside. Qualcomm claims it will allow owners to get 5 hours of battery life with just 5 minutes of charging.

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In its presentation slides, Qualcomm stated that the first three versions of Quick Charge have helped it to become the number one mobile fast charging method in the industry.

Over 100 mobile devices from companies like Samsung, LG, Lenovo, ZTE and even Google have used versions of Quick Charge, and there are over 300 accessory products like wall and car adapters, battery packs and docking stations that also support the technology.

Qualcomm’s Quick Charge 4 will offer 5 hours of battery life in just 5 minutes

For the new Quick Charge 4 (yes, Quick Charge 4, not 4.0), Qualcomm says that it charges smartphone batteries up to 20 percent faster compared to Quick Charge 3.0. At the same time, the new version is up to 5 degrees (Celsius) cooler while also offering up to 30 percent more efficient battery life.

Quick Charge 4 charges smartphone batteries up to 20 percent faster with 30 more efficient battery life.

Quick Charge 4 supports both USB Type-C and USB-PD connections and Qualcomm says it also supports USB Power Delivery with a 3A cable and a 5A specification needed for that support.

Quick Charge 4 also uses the third version of INOV (Intelligent Negotiation for Optimum Voltage). This new iteration of the company’s power-management algorithm includes real-time thermal management. Qualcomm called this “a technology industry first” and claims it offers “advance charging optimization by automatically determining and selecting the optimal power transfer level for a given thermal condition.”

There will also be a new standalone charger, with 6A of current, that still operates at 95 percent efficiency at 3A. Qualcomm says their Quick Charge 4 standard will offer intelligent thermal balancing, with high current charging handled on the companion chip.

Qualcomm’s Quick Charge 4 will offer 5 hours of battery life in just 5 minutes
In the wake of the concerns about exploding smartphone batteries that caused the recall and discontinuation of the Samsung Galaxy Note 7 this year, Qualcomm made an effort to promote the many safety features and improvements it is putting into devices that will support Quick Charge 4.

In the wake of the Note 7 recall, Qualcomm made an effort to promote the many safety features and improvements in Quick Charge 4.

Both the smartphone and its power adapter will feature protections against higher temperatures, currents and voltage. Qualcomm added that it is adding an extra layer of protection “to help prevent battery over-charging and regulate current throughout every charge cycle”.  Sensors and monitors will be put in the chip, battery and PMIC for keeping things cool.

Quick Charge 4 products can also be made to be backwards compatible with Quick Charge 2.0 and 3.0 devices on a case by case basis. Qualcomm says that the first Snapdragon 835 processors with Quick Charge 4 support will start appearing in products that ship sometime in the first half of 2017.

Are you more excited for Quick Charge 4 or the Snapdragon 835?

Qualcomm announces Snapdragon 835, built on Samsung’s 10nm process

Samsung Electronics originally announced that it was building the industry’s first 10nm mobile application processor back in October and today the company has confirmed that it is indeed manufacturing Qualcomm’s next generation Snapdragon processor. However, the processor breaks slightly from previous naming conventions, as it is called the Snapdragon 835, rather than the 830 that many had expected.

At a press event in New York, the two companies jointly announced that Qualcomm’s Snapdragon 835 will be manufactured on Samsung’s cutting edge 10-nanometer FinFET process. This decision will bring both performance and energy efficiency improvements to Qualcomm’s next generation processor, when compared with the 14nm FinFET node from Samsung used for this year’s Snapdragon 820 and 821.

Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”  – Keith Kressin, senior vice president, product management, Qualcomm Technologies

According to Samsung, the move to 10nm provides a 30 percent increase to area efficiency, combined with up to a 27 percent boost to performance or a 40 percent reduction in power consumption. Of course, these results will vary based on the processor’s architecture and real world usage, but these are nonetheless promising statistics for next year’s smartphones.

For Samsung, confirmation that it will be fulfilling orders for another generation of flagship Qualcomm processor, which will more than likely be powering a large number of flagship smartphones next year, is good news for Samsung Semiconductor.

The company’s semiconductor division has become an increasingly important contributor to Samsung’s profitability, as smartphone sales will take a hit this year following the Galaxy Note 7 saga and Galaxy smartphone sales growth has slowed.

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Samsung begins mass production of the industry’s first 10nm SoC

October 17, 2016

Production of the Qualcomm Snapdragon 835 is already under way and the processor is expected to power a range of flagship smartphones that will appear in the first half of 2017.

Related: Qualcomm announces Quick Charge 4